Difference between revisions of "Lesker PVD75 DC/RF Sputterer"

From Quattrone Nanofabrication Facility
Jump to navigation Jump to search
m
Line 55: Line 55:
 
===== SOPs & Troubleshooting =====
 
===== SOPs & Troubleshooting =====
 
* [https://www.seas.upenn.edu/~nanosop/PVD75_Sputtering_SOP.htm SOP]
 
* [https://www.seas.upenn.edu/~nanosop/PVD75_Sputtering_SOP.htm SOP]
 +
 +
* [https://upenn.box.com/s/duex4o7xnhoq4dbqoo51aaij1o1b44mk PVD-03 Open Load SOP]
  
 
===== Process Data =====
 
===== Process Data =====
 
* [https://upenn.box.com/s/lujbua3msga3313fntajkw3bcwh0d63w PVD-03 Recipes]
 
* [https://upenn.box.com/s/lujbua3msga3313fntajkw3bcwh0d63w PVD-03 Recipes]

Revision as of 09:32, 27 May 2022


Lesker PVD75 DC/RF Sputterer
PVD-03.jpeg
Tool Name Lesker PVD75 DC/RF Sputterer
Instrument Type Deposition
Staff Manager David Barth
Lab Location Bay 2
Tool Manufacturer Kurt J. Lesker
Tool Model PVD75
NEMO Designation {{{NEMO_Designation}}}
Lab Phone XXXXX
SOP Link SOP

Description

The Kurt J. Lesker PVD75 Sputter system is configured with 4 sputter guns in the following configuration:

Target 1: RF power, insulating/conductive target
Target 2: DC power, magnetic/non-magnetic conductive target
Target 3: DC power, non-magnetic conductive target
Target 4: DC power, magnetic/non-magnetic conductive target

The system is cryo-pumped process chamber with an automated interface, wafer platen rotation and heating up to 550°C, accepting sample sized from pieces to 150 mm diameter wafers.


Deposition Sources
  • ITO
  • Cr
  • Ni
  • Fe
  • FeGa
  • NiFe
  • Ti
  • Ni
  • Cu
  • Al
  • SiO2
  • TiO2
  • Al2O3
  • Ge
  • Pt
  • Ag (Warning! Ag target must be cooled down for more than 15 min after depositing Ag film.)
  • Pd
  • Si
  • Mo
  • Various others - please consult with staff

Resources

Target Request Form

SOPs & Troubleshooting
Process Data