Difference between revisions of "Lesker PVD75 DC/RF Sputterer"
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m (Protected "Lesker PVD75 DC/RF Sputterer" ([Edit=Allow only administrators] (indefinite) [Move=Allow only administrators] (indefinite)) [cascading]) |
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| Line 7: | Line 7: | ||
| imagecaption = | | imagecaption = | ||
| Instrument_Type = Deposition | | Instrument_Type = Deposition | ||
| − | | Staff_Manager = David | + | | Staff_Manager = David Barth |
| Lab_Location = Bay 2 | | Lab_Location = Bay 2 | ||
| Tool_Manufacturer = Kurt J. Lesker | | Tool_Manufacturer = Kurt J. Lesker | ||
| Line 19: | Line 19: | ||
The Kurt J. Lesker PVD75 Sputter system is configured with 4 sputter guns in the following configuration: | The Kurt J. Lesker PVD75 Sputter system is configured with 4 sputter guns in the following configuration: | ||
| − | Target 1: RF power, insulating/conductive target | + | Target 1: RF power, insulating/conductive target <br> |
| − | Target 2: DC power, magnetic/non-magnetic conductive target | + | Target 2: DC power, magnetic/non-magnetic conductive target <br> |
| − | Target 3: DC power, non-magnetic conductive target | + | Target 3: DC power, non-magnetic conductive target <br> |
| − | Target 4: DC power, magnetic/non-magnetic conductive target | + | Target 4: DC power, magnetic/non-magnetic conductive target <br> |
| − | The system is cryo-pumped process chamber with automated interface | + | The system is cryo-pumped process chamber with an automated interface, wafer platen rotation and heating up to 550°C, accepting sample sized from pieces to 150 mm diameter wafers. |
| Line 30: | Line 30: | ||
* ITO | * ITO | ||
* Cr | * Cr | ||
| + | * Ni | ||
* Fe | * Fe | ||
| + | * FeGa | ||
| + | * NiFe | ||
* Ti | * Ti | ||
* Ni | * Ni | ||
* Cu | * Cu | ||
* Al | * Al | ||
| − | * | + | * SiO<sub>2</sub> |
| + | * TiO<sub>2</sub> | ||
| + | * Al<sub>2</sub>O<sub>3</sub> | ||
* Ge | * Ge | ||
* Pt | * Pt | ||
| Line 41: | Line 46: | ||
* Pd | * Pd | ||
* Si | * Si | ||
| − | |||
* Mo | * Mo | ||
| − | * | + | * Various others - please consult with staff |
| − | |||
== Resources == | == Resources == | ||
===== SOPs & Troubleshooting ===== | ===== SOPs & Troubleshooting ===== | ||
| − | * [https://www.seas.upenn.edu/~nanosop/PVD75_Sputtering_SOP.htm | + | * [https://www.seas.upenn.edu/~nanosop/PVD75_Sputtering_SOP.htm SOP] |
Revision as of 14:15, 29 April 2022
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| Tool Name | Lesker PVD75 DC/RF Sputterer |
|---|---|
| Instrument Type | Deposition |
| Staff Manager | David Barth |
| Lab Location | Bay 2 |
| Tool Manufacturer | Kurt J. Lesker |
| Tool Model | PVD75 |
| NEMO Designation | {{{NEMO_Designation}}} |
| Lab Phone | XXXXX |
| SOP Link | SOP |
Description
The Kurt J. Lesker PVD75 Sputter system is configured with 4 sputter guns in the following configuration:
Target 1: RF power, insulating/conductive target
Target 2: DC power, magnetic/non-magnetic conductive target
Target 3: DC power, non-magnetic conductive target
Target 4: DC power, magnetic/non-magnetic conductive target
The system is cryo-pumped process chamber with an automated interface, wafer platen rotation and heating up to 550°C, accepting sample sized from pieces to 150 mm diameter wafers.
Deposition Sources
- ITO
- Cr
- Ni
- Fe
- FeGa
- NiFe
- Ti
- Ni
- Cu
- Al
- SiO2
- TiO2
- Al2O3
- Ge
- Pt
- Ag (Warning! Ag target must be cooled down for more than 15 min after depositing Ag film.)
- Pd
- Si
- Mo
- Various others - please consult with staff