Difference between revisions of "Raith EBPG5200+ E-Beam Lithography System"
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| NEMO_Designation = EBL-03 | | NEMO_Designation = EBL-03 | ||
| Lab_Phone = 8-9799 | | Lab_Phone = 8-9799 | ||
| − | | SOP Link = [[ | + | | SOP Link = [[Media:EBPG5200+_SOP.pdf | SOP]] |
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* Standard semiconductor materials | * Standard semiconductor materials | ||
* Low vapor pressure metals | * Low vapor pressure metals | ||
| − | * Resists | + | * Resists |
| + | ** [https://wiki.nano.upenn.edu/wiki/index.php?title=Resists_at_QNF#Standard_e-beam_Resists Standard e-beam resists] | ||
| + | ** [https://wiki.nano.upenn.edu/wiki/index.php?title=Resists_at_QNF#Stockroom_e-beam_Resists Stockroom e-beam resists] | ||
| + | ** [https://wiki.nano.upenn.edu/wiki/index.php?title=Resists_at_QNF#Other_Resists PMGI] | ||
== Resources == | == Resources == | ||
===== SOP ===== | ===== SOP ===== | ||
| − | <pdf height="800"> File:EBPG5200+ | + | <pdf height="800"> File:EBPG5200+_SOP.pdf</pdf> |
===== Useful Information ===== | ===== Useful Information ===== | ||
| − | * [[ | + | * [[Media:EBPG5200+_SOP.pdf | SOP]] |
* [https://upenn.box.com/s/atymr3okn3xf20rb1kvk7ny79plojobm Graph of Spotsize vs. Current (Internal Use Only)] | * [https://upenn.box.com/s/atymr3okn3xf20rb1kvk7ny79plojobm Graph of Spotsize vs. Current (Internal Use Only)] | ||
* [https://upenn.box.com/s/gzj28stdehm1kfmwjpcnio7vimr4m1w9 Alignment Mark Guidelines] | * [https://upenn.box.com/s/gzj28stdehm1kfmwjpcnio7vimr4m1w9 Alignment Mark Guidelines] | ||
Latest revision as of 13:12, 6 November 2024
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| Tool Name | Raith EBPG5200+ EBL |
|---|---|
| Instrument Type | Lithography |
| Staff Manager | David Barth |
| Lab Location | Bay 4 |
| Tool Manufacturer | Raith |
| Tool Model | EBPG5200+ |
| NEMO Designation | EBL-03 |
| Lab Phone | 8-9799 |
| SOP Link | SOP |
Description
The Raith EBPG5200+ is an electron beam lithography tool capable of high resolution patterning at 100 kV. It has a 125 MHz pattern generator, a maximum current of 350 nA, and a 1 mm mainfield size. It has an automatic aperture changer, automatic and dynamic focus and stigmation, and automatic alignment. The EBPG can achieve linewidths <8nm with stitching and overlay accuracy better than 10nm.
Applications
- Large scale, high speed patterning of positive and negative e-beam resists with features from <10 nm to micron/mm scale
Allowed Materials
- Standard semiconductor materials
- Low vapor pressure metals
- Resists
Resources
SOP