Difference between revisions of "Raith EBPG5200+ E-Beam Lithography System"

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| imagecaption =  
 
| imagecaption =  
 
| Instrument_Type = Lithography
 
| Instrument_Type = Lithography
| Staff_Manager = David Barth
+
| Staff_Manager = [[David Barth | David Barth]]
 
| Lab_Location = Bay 4
 
| Lab_Location = Bay 4
 
| Tool_Manufacturer = Raith
 
| Tool_Manufacturer = Raith
 
| Tool_Model = EBPG5200+
 
| Tool_Model = EBPG5200+
| Iris_Designation = EBL-03
+
| NEMO_Designation = EBL-03
 
| Lab_Phone = 8-9799
 
| Lab_Phone = 8-9799
| SOP Link = [https://repository.upenn.edu/handle/20.500.14332/59337 SOP]
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| SOP Link = [[Media:EBPG5200+_SOP.pdf | SOP]]
 
}}
 
}}
  
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* Standard semiconductor materials
 
* Standard semiconductor materials
 
* Low vapor pressure metals
 
* Low vapor pressure metals
* Resists  
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* Resists
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** [https://wiki.nano.upenn.edu/wiki/index.php?title=Resists_at_QNF#Standard_e-beam_Resists Standard e-beam resists]
 +
** [https://wiki.nano.upenn.edu/wiki/index.php?title=Resists_at_QNF#Stockroom_e-beam_Resists Stockroom e-beam resists]
 +
** [https://wiki.nano.upenn.edu/wiki/index.php?title=Resists_at_QNF#Other_Resists PMGI]
  
 
== Resources ==
 
== Resources ==
  
===== SOPs & Troubleshooting =====
+
===== SOP =====
* [https://repository.upenn.edu/handle/20.500.14332/59337 SOP]
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<pdf height="800"> File:EBPG5200+_SOP.pdf</pdf>
 +
 
 +
===== Useful Information =====
 +
* [[Media:EBPG5200+_SOP.pdf | SOP]]
 +
* [https://upenn.box.com/s/atymr3okn3xf20rb1kvk7ny79plojobm Graph of Spotsize vs. Current (Internal Use Only)]
 +
* [https://upenn.box.com/s/gzj28stdehm1kfmwjpcnio7vimr4m1w9 Alignment Mark Guidelines]
  
 
===== Resist and Process Data =====
 
===== Resist and Process Data =====
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* [https://avs.scitation.org/doi/full/10.1116/1.2366698 Cold Development for PMMA and ZEP]
 
* [https://avs.scitation.org/doi/full/10.1116/1.2366698 Cold Development for PMMA and ZEP]
 
* [https://www.sciencedirect.com/science/article/pii/S0167931702004689 IPA:H<sub>2</sub>O for High Contrast Development of PMMA]
 
* [https://www.sciencedirect.com/science/article/pii/S0167931702004689 IPA:H<sub>2</sub>O for High Contrast Development of PMMA]
 +
* [[ZEP_Process_Data | ZEP520A Contrast Curve]]

Latest revision as of 13:12, 6 November 2024


Raith EBPG5200+ EBL
EBL-03.jpg
Tool Name Raith EBPG5200+ EBL
Instrument Type Lithography
Staff Manager David Barth
Lab Location Bay 4
Tool Manufacturer Raith
Tool Model EBPG5200+
NEMO Designation EBL-03
Lab Phone 8-9799
SOP Link SOP

Description

The Raith EBPG5200+ is an electron beam lithography tool capable of high resolution patterning at 100 kV. It has a 125 MHz pattern generator, a maximum current of 350 nA, and a 1 mm mainfield size. It has an automatic aperture changer, automatic and dynamic focus and stigmation, and automatic alignment. The EBPG can achieve linewidths <8nm with stitching and overlay accuracy better than 10nm.


Applications
  • Large scale, high speed patterning of positive and negative e-beam resists with features from <10 nm to micron/mm scale
Allowed Materials

Resources

SOP

Useful Information
Resist and Process Data