Difference between revisions of "Cambridge Nanotech S200 ALD"
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===== Applications ===== | ===== Applications ===== | ||
| − | * Aluminum | + | * [[ALD-01: Aluminum Oxide Deposition | Aluminum Oxide Deposition]] |
| + | * [[ALD-01: Hafnium Oxide Deposition | Hafnium Oxide Deposition]] | ||
* Titanium oxide deposition | * Titanium oxide deposition | ||
| − | |||
* Silicon Dioxide deposition | * Silicon Dioxide deposition | ||
* Deposition of other films can be made available upon request | * Deposition of other films can be made available upon request | ||
| Line 53: | Line 53: | ||
| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1 || 09/24/22 | | Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1 || 09/24/22 | ||
|- | |- | ||
| − | | Al<sub>2</sub>O<sub>3</sub> || TMA || 0.020 || 5 || H<sub>2</sub>O || 0.020 || 5 || 150 || 20 || 1 || | + | | Al<sub>2</sub>O<sub>3</sub> || TMA || 0.020 || 5 || H<sub>2</sub>O || 0.020 || 5 || 150 || 20 || 1 || 02/09/24 |
|- | |- | ||
| HfO<sub>2</sub> || TDMAHf || 0.15 || 8 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1.3 || 09/24/22 | | HfO<sub>2</sub> || TDMAHf || 0.15 || 8 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1.3 || 09/24/22 | ||
| Line 61: | Line 61: | ||
| TiO<sub>2</sub> || TDMATi || 0.4 || 10 || H<sub>2</sub>O || 0.015 || 5 || 250 || 20 || 0.4 || 05/02/22 | | TiO<sub>2</sub> || TDMATi || 0.4 || 10 || H<sub>2</sub>O || 0.015 || 5 || 250 || 20 || 0.4 || 05/02/22 | ||
|- | |- | ||
| − | | TiO<sub>2</sub> || TDMATi || 0.3 || 10 || H<sub>2</sub>O || 0.015 || 10 || 150 || 20 || 0.5 || 02/ | + | | TiO<sub>2</sub> || TDMATi || 0.3 || 10 || H<sub>2</sub>O || 0.015 || 10 || 150 || 20 || 0.5 || 02/02/24 |
|- | |- | ||
|} | |} | ||
* Ozone based depositions | * Ozone based depositions | ||
| + | Recipe name: 200C_SiO2_qnf_wiki | ||
{| class="wikitable" | {| class="wikitable" | ||
! rowspan=2 |Material Name | ! rowspan=2 |Material Name | ||
| Line 77: | Line 78: | ||
! Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open || Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open | ! Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open || Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open | ||
|- | |- | ||
| − | | SiO<sub>2</sub> || BDEAS || 0.05 || 5 SV closed/ 3 SV open || O<sub>3</sub> || 0.2 || 20 SV closed/ 5 SV open || 200 || 20 || 0. | + | | SiO<sub>2</sub> || BDEAS || 0.05 || 5 SV closed/ 3 SV open || O<sub>3</sub> || 0.2 || 20 SV closed/ 5 SV open || 200 || 20 || 0.5 || 10/29/24 |
|- | |- | ||
|} | |} | ||
Latest revision as of 09:31, 29 October 2024
 |
|
| Tool Name | Cambridge Nanotech S200 ALD |
|---|---|
| Instrument Type | Deposition |
| Staff Manager | Sam Azadi |
| Lab Location | Bay 1 |
| Tool Manufacturer | Ultratech/Cambridge |
| Tool Model | S200 |
| NEMO Designation | ALD-01 |
| Lab Phone | 215-898-9736 |
| SOP Link | QNF SOP |
Description
The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.
The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al2O3, HfO2, SiO2, and TiO2.
Applications
- Aluminum Oxide Deposition
- Hafnium Oxide Deposition
- Titanium oxide deposition
- Silicon Dioxide deposition
- Deposition of other films can be made available upon request
Allowed material in ALD System
- Si, SixNy, SiO2, SOI
- Hard masks compatible with process temperature
Process Data
Standard Processes
- Water based depositions
| Material Name | Precursor 1 | Precursor 2 | Dep. temperature [C] | Carrier flow [sccm] | Dep. rate [A/cyc] | Date [MM/DD/YY] | ||||
|---|---|---|---|---|---|---|---|---|---|---|
| Name | Pulse time [s] | Wait time [s] | Name | Pulse time [s] | Wait time [s] | |||||
| Al2O3 | TMA | 0.015 | 5 | H2O | 0.015 | 5 | 245 | 20 | 1 | 06/28/23 |
| Al2O3 | TMA | 0.015 | 5 | H2O | 0.015 | 5 | 200 | 20 | 1 | 09/24/22 |
| Al2O3 | TMA | 0.020 | 5 | H2O | 0.020 | 5 | 150 | 20 | 1 | 02/09/24 |
| HfO2 | TDMAHf | 0.15 | 8 | H2O | 0.015 | 5 | 200 | 20 | 1.3 | 09/24/22 |
| HfO2 | TDMAHf | 0.3 | 10 | H2O | 0.015 | 8 | 150 | 20 | 1.3 | 04/25/23 |
| TiO2 | TDMATi | 0.4 | 10 | H2O | 0.015 | 5 | 250 | 20 | 0.4 | 05/02/22 |
| TiO2 | TDMATi | 0.3 | 10 | H2O | 0.015 | 10 | 150 | 20 | 0.5 | 02/02/24 |
- Ozone based depositions
Recipe name: 200C_SiO2_qnf_wiki
| Material Name | Precursor 1 | Precursor 2 | Dep. temperature [C] | Carrier flow [sccm] | Dep. rate [A/cyc] | Date [MM/DD/YY] | ||||
|---|---|---|---|---|---|---|---|---|---|---|
| Name | Pulse time [s] | Wait time [s] : Stop Valve closed / open | Name | Pulse time [s] | Wait time [s] : Stop Valve closed / open | |||||
| SiO2 | BDEAS | 0.05 | 5 SV closed/ 3 SV open | O3 | 0.2 | 20 SV closed/ 5 SV open | 200 | 20 | 0.5 | 10/29/24 |
Deposition Rate Monitoring
Resources
SOPs & Troubleshooting