Difference between revisions of "Oxford 80 Plus RIE"

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| imagecaption =  
 
| imagecaption =  
 
| Instrument_Type = Etch
 
| Instrument_Type = Etch
−
| Staff_Manager = Sam Azadi
+
| Staff_Manager = [[Sam Azadi | Sam Azadi]]
 
| Lab_Location = Bay 2
 
| Lab_Location = Bay 2
 
| Tool_Manufacturer = Oxford Instruments  
 
| Tool_Manufacturer = Oxford Instruments  
 
| Tool_Model = 80+
 
| Tool_Model = 80+
−
| Iris_Designation = DE-04
+
| NEMO_Designation = DE-04
 
| Lab_Phone = 215-898-9748
 
| Lab_Phone = 215-898-9748
 
| SOP Link = [https://repository.upenn.edu/scn_sop/7/ QNF SOP]
 
| SOP Link = [https://repository.upenn.edu/scn_sop/7/ QNF SOP]
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* Etch of Si
 
* Etch of Si
 
* Etch of resist
 
* Etch of resist
 +
 +
===== The following materials are ''NOT'' allowed in the chamber =====
 +
- Au, Ag, PZT, Pt, ZnO, ITO, Pb, Zn, In, Ni, Fe, Cu
 +
 +
===== The following materials can not be exposed to plasma in the chamber =====
 +
- SU-8, Cyclone, Polyimide
 +
 +
== Standard Process Information ==
 +
 +
==== Etch Rate ====
 +
Recipe parameters are defined in the reports above. - all rates are calculated from a full 4" wafers, small features may have lower etch rate.
 +
 +
Etch rate of...
 +
 +
* '''PECVD oxide and nitride''' are listed in the ''reports below''.
 +
* '''thermal SiO2''' using '''CF4 recipe''': ''48 nm/min''
 +
* '''thermal SiO2''' using '''CHF3/O2 recipe''': ''45 nm/min''
 +
* '''LPCVD SiNx''' using '''CF4 recipe''': ''60 nm/min'', DC bias 420 V - measured on 07/29/2024
 +
* '''LPCVD SiNx''' using '''CHF3/O2 recipe''': ''45 nm/min'', DC bias 410 V - measured on 03/05/2024
 +
 +
 +
 +
 +
[[ PECVD SiO2 via CHF3 + O2 | '''PECVD SiO<sub>2</sub> via CHF<sub>3</sub> + O <sub>2</sub> ''']]
 +
 +
[[ PECVD SiNx via CHF3 + O2 | '''PECVD SiN<sub>x</sub> via CHF<sub>3</sub> + O <sub>2</sub>''']]
  
 
== Resources ==
 
== Resources ==
  
−
[https://www.youtube.com/watch?v=aXAcgAkQpLc Oxford 80+ Training Video]
 
  
 +
* [https://repository.upenn.edu/scn_tooldata/37/ '''PECVD SiN<sub>x</sub> via CF<sub>4</sub>''']
  
−
===== SOPs & Troubleshooting =====
+
* [https://repository.upenn.edu/scn_tooldata/38/ '''PECVD SiO<sub>2</sub> via CHF<sub>3</sub> + O <sub>2</sub>''']
−
* [https://repository.upenn.edu/scn_sop/7/ QNF SOP]
 
  
 +
* [https://repository.upenn.edu/scn_tooldata/39/ '''PECVD SiN<sub>x</sub> via CHF<sub>3</sub> + O <sub>2</sub>''']
  
−
===== Protocols and Reports =====
+
* [https://repository.upenn.edu/scn_protocols/29/ '''PECVD SiO<sub>2</sub> via CHF<sub>3</sub> + O <sub>2</sub>''']
−
* [https://repository.upenn.edu/scn_tooldata/36/ Reactive Ion Etching (RIE) of Silicon dioxide with tetrafluoromethane (CF<sub>4</sub>)]
 
  
−
* [https://repository.upenn.edu/scn_tooldata/37/ Reactive Ion Etching (RIE) of Silicon nitride with tetrafluoromethane (CF<sub>4</sub>)]
+
* [https://repository.upenn.edu/scn_tooldata/40/ '''Si and ZEP520A resist via CF<sub>4</sub>''']
  
−
* [https://repository.upenn.edu/scn_tooldata/38/ Reactive Ion Etching (RIE) of Silicon dioxide with trifluoromethane (CHF<sub>3</sub>) and oxygen]
+
* [https://repository.upenn.edu/scn_protocols/55/ ''' Comparison of Si and PECVD SiO<sub>2</sub> via CF<sub>4</sub> and CHF<sub>3</sub> + O <sub>2</sub>''']
  
−
* [https://repository.upenn.edu/scn_tooldata/39/ Reactive Ion Etching (RIE) of Silicon nitride with trifluoromethane (CHF<sub>3</sub>) and oxygen]
+
===== SOPs & Troubleshooting =====
 +
* [https://repository.upenn.edu/scn_sop/7/ QNF SOP]
  
−
* [https://repository.upenn.edu/scn_protocols/29/ Reactive Ion Etching (RIE) selectivity of silicon dioxide and S1800 resist using trifluoromethane (CHF<sub>3</sub>) and oxygen]
+
* [https://upenn.box.com/s/slifsykn8u1s3rxnkabjxjjgp3pi9k8u ATPACT Manual]
  
−
* [https://repository.upenn.edu/scn_tooldata/40/ Reactive Ion Etching (RIE) selectivity of silicon and ZEP520A resist using tetrafluoromethane (CF<sub>4</sub>)]
+
* [https://upenn.box.com/s/luhzy81vv31ou9nh4cxwutz93b0pdrnf E 200T-600T Counters Manual]

Latest revision as of 15:08, 16 October 2024


Oxford 80 Plus RIE
DE-04.jpeg
Tool Name Oxford 80 Plus RIE
Instrument Type Etch
Staff Manager Sam Azadi
Lab Location Bay 2
Tool Manufacturer Oxford Instruments
Tool Model 80+
NEMO Designation DE-04
Lab Phone 215-898-9748
SOP Link QNF SOP

Description

Oxford 80 Plus is an anisotropic dry etch tool. The main use of this tool is to etch SiO2, and SiNx to create hard masks for deep Si etch. However, it etches many other materials, including a variety of resists. The tool is connected to the following gases: Ar, O2, CF4, CHF3, SF6.

The plasma is ignited by the oscillating electric field created by the RF power at 13.56 MHz. The wafer is cooled down via passive cooling through a graphite chuck.

Applications
  • Etch of SiO2
  • Etch of SiNx
  • Etch of Si
  • Etch of resist
The following materials are NOT allowed in the chamber

- Au, Ag, PZT, Pt, ZnO, ITO, Pb, Zn, In, Ni, Fe, Cu

The following materials can not be exposed to plasma in the chamber

- SU-8, Cyclone, Polyimide

Standard Process Information

Etch Rate

Recipe parameters are defined in the reports above. - all rates are calculated from a full 4" wafers, small features may have lower etch rate.

Etch rate of...

  • PECVD oxide and nitride are listed in the reports below.
  • thermal SiO2 using CF4 recipe: 48 nm/min
  • thermal SiO2 using CHF3/O2 recipe: 45 nm/min
  • LPCVD SiNx using CF4 recipe: 60 nm/min, DC bias 420 V - measured on 07/29/2024
  • LPCVD SiNx using CHF3/O2 recipe: 45 nm/min, DC bias 410 V - measured on 03/05/2024



PECVD SiO2 via CHF3 + O 2

PECVD SiNx via CHF3 + O 2

Resources

SOPs & Troubleshooting
Retrieved from "https://wiki.nano.upenn.edu/wiki/index.php?title=Oxford_80_Plus_RIE&oldid=2080"