Difference between revisions of "Oxford PlasmaLab 100 PECVD"

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| name = Oxford PlasmaLab 100 PECVD
 
| name = Oxford PlasmaLab 100 PECVD
 
| Tool_Name = Oxford PlasmaLab 100 PECVD
 
| Tool_Name = Oxford PlasmaLab 100 PECVD
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| image = [[Image:ALD-01.jpeg|300px]]
+
| image = [[Image:CVD-01.jpeg|300px]]
 
| imagecaption =  
 
| imagecaption =  
 
| Instrument_Type = Deposition
 
| Instrument_Type = Deposition
−
| Staff_Manager = Sam Azadi
+
| Staff_Manager = [[Sam Azadi | Sam Azadi]]
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| Lab_Location = Bay 2
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| Lab_Location = Bay 1
 
| Tool_Manufacturer = Oxford
 
| Tool_Manufacturer = Oxford
 
| Tool_Model = PlasmaLab 100
 
| Tool_Model = PlasmaLab 100
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| Iris_Designation = CVD-01
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| NEMO_Designation = CVD-01
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| Lab_Phone = XXXXX
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| Lab_Phone = 215-898-9736
−
| SOP Link = [https://repository.upenn.edu/scn_sop/5/]
+
| SOP Link = [https://repository.upenn.edu/scn_sop/5/ QNF SOP]
 
}}
 
}}
  
 
== Description ==
 
== Description ==
−
The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.
+
The QNF Oxford Instruments PlasmaLab System 100 Plasma Enhanced Chemical Vapor Deposition (PECVD) tool is used to deposit a variety of thin-film materials at relatively modest temperatures on a variety of substrate materials. The tool utilizes an RF generator to deposit thin films at temperatures lower than traditional chemical vapor deposition systems. The tool operates between 150 and 350 C.
  
−
The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al2O3, HfO2, TiO2, and SiO2.
 
  
 
===== Applications =====
 
===== Applications =====
−
* Aluminum oxide deposition
 
 
* Silicon dioxide deposition
 
* Silicon dioxide deposition
−
* Titanium oxide deposition
+
* Silicon nitride deposition
−
* Hafnium oxide deposition
+
* [[Amorphous silicon deposition | Amorphous silicon deposition]]
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* Deposition of other films can be made available upon request
 
  
−
===== Allowed material in ALD System =====
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===== Allowed material in PECVD System =====
−
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI
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* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI, SiC, GaN
 +
* Al, Pt, Cr, W, Mo, Ti
 
* Hard masks compatible with process temperature
 
* Hard masks compatible with process temperature
 +
 +
==== List of materials NOT allowed in the chamber ====
 +
{| class="wikitable"
 +
|-
 +
! Name || symbol || Melting Point [C]
 +
|-
 +
| Bismuth || Bi || 271
 +
|-
 +
| Cadmium || Cd || 321
 +
|-
 +
| Carbon || C || Subl.
 +
|-
 +
| Gallium || Ga || 30
 +
|-
 +
| Gold || Au || 1062
 +
|-
 +
| Indium || In || 157
 +
|-
 +
| Lead || Pb || 328
 +
|-
 +
| Lithium || Li || 179
 +
|-
 +
| Selenium || Se || 217
 +
|-
 +
| Sulfur || S || 115
 +
|-
 +
| Tellurium || Te || 452
 +
|-
 +
| Thallium || Tl || 302
 +
|-
 +
| Tin || Sn || 232
 +
|-
 +
| Zinc || Zn || 419
 +
|}
 +
 +
== Process information ==
 +
 +
 +
=== Standard process data - Table temperature fixed at 350 C ===
 +
* SiO2 on 01/09/2024
 +
 +
Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section
 +
 +
Recipe name on the tool: Test-SiO2
 +
 +
Deposition rate: ~ 291 nm/min ± 5 nm/min
 +
 +
 +
 +
* SiNx on 07/29/2024
 +
 +
Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section
 +
 +
Recipe name on the tool: Test-SiNx deposition
 +
 +
Deposition rate: ~ 46 nm/min ± 2 nm/min
 +
 +
 +
 +
* a-Si on 01/09/2024
 +
 +
Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section
 +
 +
Recipe name on the tool: a-Si
 +
 +
Deposition rate: ~ 60 nm/min ± 5 nm/min
 +
 +
 +
==== Deposition Rate Monitoring ====
 +
[[Image:Sio2 dep on cvd-01.jpg|left|500px]] [[Image:Sinx dep rate on cvd-01.jpg|center|500px]]
 +
 +
 +
=== Special process data - adjustable table temperature ===
 +
* SiO2
 +
 +
Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section - table temperature at 200 C
 +
 +
Recipe name on the tool: Test-SiO2
 +
 +
Deposition rate: ~ 230 nm/min ± 2 nm/min
  
 
== Resources ==
 
== Resources ==
  
 
===== SOPs & Troubleshooting =====
 
===== SOPs & Troubleshooting =====
−
* [https://repository.upenn.edu/scn_sop/6/ QNF SOP]
+
* [https://repository.upenn.edu/scn_sop/5/ QNF SOP]
−
 
+
* [https://upenn.box.com/s/sglgbidfjpw36f6v50rzgcpll5yliloc/ PECVD Table Temp Tuning Procedure]
  
−
===== Protocols =====
+
===== Protocols and Reports =====
−
* [https://repository.upenn.edu/scn_tooldata/35/ SiNx deposition process parameters]
+
* [https://repository.upenn.edu/scn_tooldata/34/ SiO<sub>2</sub> deposition process parameters]
 +
* [https://repository.upenn.edu/scn_tooldata/35/ SiN<sub>x</sub> deposition process parameters]
 +
* [https://repository.upenn.edu/scn_tooldata/43/ Optimization of a-Si deposition on Oxford PlasmaLab 100 PECVD using Taguchi L9 based DOE]

Latest revision as of 13:41, 14 October 2024


Oxford PlasmaLab 100 PECVD
CVD-01.jpeg
Tool Name Oxford PlasmaLab 100 PECVD
Instrument Type Deposition
Staff Manager Sam Azadi
Lab Location Bay 1
Tool Manufacturer Oxford
Tool Model PlasmaLab 100
NEMO Designation CVD-01
Lab Phone 215-898-9736
SOP Link QNF SOP

Description

The QNF Oxford Instruments PlasmaLab System 100 Plasma Enhanced Chemical Vapor Deposition (PECVD) tool is used to deposit a variety of thin-film materials at relatively modest temperatures on a variety of substrate materials. The tool utilizes an RF generator to deposit thin films at temperatures lower than traditional chemical vapor deposition systems. The tool operates between 150 and 350 C.


Applications
Allowed material in PECVD System
  • Si, SixNy, SiO2, SOI, SiC, GaN
  • Al, Pt, Cr, W, Mo, Ti
  • Hard masks compatible with process temperature

List of materials NOT allowed in the chamber

Name symbol Melting Point [C]
Bismuth Bi 271
Cadmium Cd 321
Carbon C Subl.
Gallium Ga 30
Gold Au 1062
Indium In 157
Lead Pb 328
Lithium Li 179
Selenium Se 217
Sulfur S 115
Tellurium Te 452
Thallium Tl 302
Tin Sn 232
Zinc Zn 419

Process information

Standard process data - Table temperature fixed at 350 C

  • SiO2 on 01/09/2024

Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section

Recipe name on the tool: Test-SiO2

Deposition rate: ~ 291 nm/min ± 5 nm/min


  • SiNx on 07/29/2024

Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section

Recipe name on the tool: Test-SiNx deposition

Deposition rate: ~ 46 nm/min ± 2 nm/min


  • a-Si on 01/09/2024

Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section

Recipe name on the tool: a-Si

Deposition rate: ~ 60 nm/min ± 5 nm/min


Deposition Rate Monitoring

Sio2 dep on cvd-01.jpg
Sinx dep rate on cvd-01.jpg


Special process data - adjustable table temperature

  • SiO2

Recipe parameters: optimized process parameters are in the report under "Protocols and Reports" section - table temperature at 200 C

Recipe name on the tool: Test-SiO2

Deposition rate: ~ 230 nm/min ± 2 nm/min

Resources

SOPs & Troubleshooting
Protocols and Reports
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