Difference between revisions of "RTA-01"
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(Created page with "== Description == The Rapid Thermal Annealer-01 anneals the sample up to 1200° C. The processes can be run under atmospheric pressure in Oxygen, Nitrogen, Forming Gas, and A...") |
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+ | [[Category:Thermal Processing]] | ||
+ | |||
+ | {{EquipmentInfo | ||
+ | | name = AET Thermal RX | ||
+ | | Tool_Name = Rapid Thermal Annealer - 01 | ||
+ | | image = [[Image:CVD-02.jpeg|300px]] | ||
+ | | imagecaption = | ||
+ | | Instrument_Type = Deposition | ||
+ | | Staff_Manager = [[Lucas Barreto | Lucas Barreto]] | ||
+ | | Lab_Location = Bay 2 | ||
+ | | Tool_Manufacturer = AET | ||
+ | | Tool_Model = Thermal RX | ||
+ | | NEMO_Designation = RTA-01 | ||
+ | | Lab_Phone = 215-898-9736 | ||
+ | | SOP Link = [https://repository.upenn.edu/scn_sop/20/ SOP] | ||
+ | }} | ||
+ | |||
== Description == | == Description == | ||
Revision as of 13:02, 9 September 2024
Tool Name | Rapid Thermal Annealer - 01 |
---|---|
Instrument Type | Deposition |
Staff Manager | Lucas Barreto |
Lab Location | Bay 2 |
Tool Manufacturer | AET |
Tool Model | Thermal RX |
NEMO Designation | RTA-01 |
Lab Phone | 215-898-9736 |
SOP Link | SOP |
Description
The Rapid Thermal Annealer-01 anneals the sample up to 1200° C. The processes can be run under atmospheric pressure in Oxygen, Nitrogen, Forming Gas, and Argon environments. The tool can hold 4’’ wafers or smaller chips. Only MOS-compatible materials are allowed. Compound semiconductors and metals are not allowed.