Difference between revisions of "Cambridge Nanotech S200 ALD"

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| imagecaption =  
 
| imagecaption =  
 
| Instrument_Type = Deposition
 
| Instrument_Type = Deposition
−
| Staff_Manager = Sam Azadi
+
| Staff_Manager = [[Sam Azadi | Sam Azadi]]
 
| Lab_Location = Bay 1
 
| Lab_Location = Bay 1
 
| Tool_Manufacturer = Ultratech/Cambridge
 
| Tool_Manufacturer = Ultratech/Cambridge
 
| Tool_Model = S200
 
| Tool_Model = S200
−
| Iris_Designation = ALD-01
+
| NEMO_Designation = ALD-01
 
| Lab_Phone = 215-898-9736
 
| Lab_Phone = 215-898-9736
 
| SOP Link = [https://repository.upenn.edu/scn_sop/6/ QNF SOP]
 
| SOP Link = [https://repository.upenn.edu/scn_sop/6/ QNF SOP]
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The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.
 
The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.
  
−
The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al2O3, HfO2, TiO2, and SiO2.
+
The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, SiO<sub>2</sub>, and TiO<sub>2</sub>.
  
 
===== Applications =====
 
===== Applications =====
−
* Aluminum oxide deposition
+
* [[ALD-01: Aluminum Oxide Deposition | Aluminum Oxide Deposition]]
−
* Silicon dioxide deposition
+
* [[ALD-01: Hafnium Oxide Deposition | Hafnium Oxide Deposition]]
 
* Titanium oxide deposition
 
* Titanium oxide deposition
−
* Hafnium oxide deposition
+
* Silicon Dioxide deposition
 
* Deposition of other films can be made available upon request
 
* Deposition of other films can be made available upon request
  
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* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI
 
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI
 
* Hard masks compatible with process temperature
 
* Hard masks compatible with process temperature
 +
 +
== Process Data ==
 +
 +
==== Standard Processes ====
 +
 +
 +
* Water based depositions
 +
{| class="wikitable"
 +
! rowspan=2 |Material Name
 +
! colspan=3 |Precursor 1
 +
! colspan =3 |Precursor 2
 +
! rowspan=2 |Dep. temperature [C]
 +
!rowspan=2 | Carrier flow [sccm]
 +
!rowspan=2 | Dep. rate [A/cyc]
 +
!rowspan=2 |Date [MM/DD/YY]
 +
|-
 +
! Name || Pulse time [s] || Wait time [s] || Name || Pulse time [s] || Wait time [s]
 +
|-
 +
| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 245 || 20 || 1 || 06/28/23
 +
|-
 +
| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1 || 09/24/22
 +
|-
 +
| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.020 || 5 || H<sub>2</sub>O || 0.020 || 5 || 150 || 20 || 1 || 02/09/24
 +
|-
 +
| HfO<sub>2</sub> || TDMAHf || 0.15 || 8 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1.3 || 09/24/22
 +
|-
 +
| HfO<sub>2</sub> || TDMAHf || 0.3 || 10 || H<sub>2</sub>O || 0.015 || 8 || 150 || 20 || 1.3 || 04/25/23
 +
|-
 +
| TiO<sub>2</sub> || TDMATi || 0.4 || 10 || H<sub>2</sub>O || 0.015 || 5 || 250 || 20 || 0.4 || 05/02/22
 +
|-
 +
| TiO<sub>2</sub> || TDMATi || 0.3 || 10 || H<sub>2</sub>O || 0.015 || 10 || 150 || 20 || 0.5 || 02/02/24
 +
|-
 +
|}
 +
 +
* Ozone based depositions
 +
{| class="wikitable"
 +
! rowspan=2 |Material Name
 +
! colspan=3 |Precursor 1
 +
! colspan =3 |Precursor 2
 +
! rowspan=2 |Dep. temperature [C]
 +
!rowspan=2 | Carrier flow [sccm]
 +
!rowspan=2 | Dep. rate [A/cyc]
 +
!rowspan=2 |Date [MM/DD/YY]
 +
|-
 +
! Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open || Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open
 +
|-
 +
| SiO<sub>2</sub> || BDEAS || 0.02 || 5 SV closed/ 3 SV open || O<sub>3</sub> || 0.2 || 20 SV closed/ 5 SV open  || 200 || 20 || 0.6 || 02/12/24
 +
|-
 +
|}
 +
 +
==== Deposition Rate Monitoring ====
 +
 +
[[Image:Hafnia Oct6.jpg|left|500px]] [[Image:Alumina Oct6.jpg|center|500px]]
  
 
== Resources ==
 
== Resources ==
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===== SOPs & Troubleshooting =====
 
===== SOPs & Troubleshooting =====
 
* [https://repository.upenn.edu/scn_sop/6/ QNF SOP]
 
* [https://repository.upenn.edu/scn_sop/6/ QNF SOP]
 +
* [https://upenn.box.com/s/3hq8iik8jeb1385mrwgs16i6vfpvxt6f ALD KOH Cleaning Procedure]
 +
 +
 +
===== Protocols and Reports =====
 +
 +
* [https://repository.upenn.edu/scn_protocols/72/ ALD deposition of SiO<sub>2</sub> using BDEAS and Ozone precursors]

Revision as of 15:51, 23 May 2024


Cambridge Nanotech S200 ALD
ALD-01.jpeg
Tool Name Cambridge Nanotech S200 ALD
Instrument Type Deposition
Staff Manager Sam Azadi
Lab Location Bay 1
Tool Manufacturer Ultratech/Cambridge
Tool Model S200
NEMO Designation ALD-01
Lab Phone 215-898-9736
SOP Link QNF SOP

Description

The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.

The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al2O3, HfO2, SiO2, and TiO2.

Applications
Allowed material in ALD System
  • Si, SixNy, SiO2, SOI
  • Hard masks compatible with process temperature

Process Data

Standard Processes

  • Water based depositions
Material Name Precursor 1 Precursor 2 Dep. temperature [C] Carrier flow [sccm] Dep. rate [A/cyc] Date [MM/DD/YY]
Name Pulse time [s] Wait time [s] Name Pulse time [s] Wait time [s]
Al2O3 TMA 0.015 5 H2O 0.015 5 245 20 1 06/28/23
Al2O3 TMA 0.015 5 H2O 0.015 5 200 20 1 09/24/22
Al2O3 TMA 0.020 5 H2O 0.020 5 150 20 1 02/09/24
HfO2 TDMAHf 0.15 8 H2O 0.015 5 200 20 1.3 09/24/22
HfO2 TDMAHf 0.3 10 H2O 0.015 8 150 20 1.3 04/25/23
TiO2 TDMATi 0.4 10 H2O 0.015 5 250 20 0.4 05/02/22
TiO2 TDMATi 0.3 10 H2O 0.015 10 150 20 0.5 02/02/24
  • Ozone based depositions
Material Name Precursor 1 Precursor 2 Dep. temperature [C] Carrier flow [sccm] Dep. rate [A/cyc] Date [MM/DD/YY]
Name Pulse time [s] Wait time [s] : Stop Valve closed / open Name Pulse time [s] Wait time [s] : Stop Valve closed / open
SiO2 BDEAS 0.02 5 SV closed/ 3 SV open O3 0.2 20 SV closed/ 5 SV open 200 20 0.6 02/12/24

Deposition Rate Monitoring

Hafnia Oct6.jpg
Alumina Oct6.jpg

Resources

SOPs & Troubleshooting


Protocols and Reports
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