Difference between revisions of "Raith EBPG5200+ E-Beam Lithography System"
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(Created page with "Category:Lithography {{EquipmentInfo | name = Raith EBPG5200+ E-Beam Lithography System | Tool_Name = Raith EBPG5200+ E-Beam Lithography System | image = Image:EBL-01.j...") |
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| Iris_Designation = EBL-03 | | Iris_Designation = EBL-03 | ||
| Lab_Phone = 8-9799 | | Lab_Phone = 8-9799 | ||
| − | | SOP Link = [https:// | + | | SOP Link = [https://nemo.nano.upenn.edu/media/tool_documents/ebl-03-raith-ebpg5200/EBPG5200_SOP.pdf SOP] |
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===== SOPs & Troubleshooting ===== | ===== SOPs & Troubleshooting ===== | ||
| − | * [https:// | + | * [https://nemo.nano.upenn.edu/media/tool_documents/ebl-03-raith-ebpg5200/EBPG5200_SOP.pdf SOP] |
===== Resist and Process Data ===== | ===== Resist and Process Data ===== | ||
Revision as of 15:42, 22 November 2023
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| Tool Name | Raith EBPG5200+ E-Beam Lithography System |
|---|---|
| Instrument Type | Lithography |
| Staff Manager | David Barth |
| Lab Location | Bay 4 |
| Tool Manufacturer | Raith |
| Tool Model | EBPG5200+ |
| NEMO Designation | {{{NEMO_Designation}}} |
| Lab Phone | 8-9799 |
| SOP Link | SOP |
Description
The Raith EBPG5200+ is an electron beam lithography tool capable of high resolution patterning at 100 kV. It has a 125 MHz pattern generator, a maximum current of 350 nA, and a 1 mm mainfield size. It has an automatic aperture changer, automatic and dynamic focus and stigmation, and automatic alignment. The EBPG can achieve linewidths <8nm with stitching and overlay accuracy better than 10nm.
Applications
- Large scale, high speed patterning of positive and negative e-beam resists with features from <10 nm to micron/mm scale
Allowed Materials
- Standard semiconductor materials
- Low vapor pressure metals
- Resists