View source for Oxford PlasmaLab 100 PECVD

[[Category:Deposition]]

{{EquipmentInfo
| name = Oxford PlasmaLab 100 PECVD
| Tool_Name = Oxford PlasmaLab 100 PECVD
| image = [[Image:CVD-01.jpeg|300px]]
| imagecaption = 
| Instrument_Type = Deposition
| Staff_Manager = Sam Azadi
| Lab_Location = Bay 1
| Tool_Manufacturer = Oxford
| Tool_Model = PlasmaLab 100
| Iris_Designation = CVD-01
| Lab_Phone = 215-898-9736
| SOP Link = [https://repository.upenn.edu/scn_sop/5/ QNF SOP]
}}

== Description ==
The QNF Oxford Instruments PlasmaLab System 100 Plasma Enhanced Chemical Vapor Deposition (PECVD) tool is used to deposit a variety of thin-film materials at relatively modest temperatures on a variety of substrate materials. The tool utilizes an RF generator to deposit thin films at temperatures lower than traditional chemical vapor deposition systems. The tool operates between 150 and 350 C.


===== Applications =====
* Silicon dioxide deposition
* Silicon nitride deposition
* Amorphous silicon deposition

===== Allowed material in PECVD System =====
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI
* Hard masks compatible with process temperature

== Resources ==

===== SOPs & Troubleshooting =====
* [https://repository.upenn.edu/scn_sop/6/ QNF SOP]


===== Protocols and Reports =====
* [https://repository.upenn.edu/scn_tooldata/34/ SiO<sub>2</sub> deposition process parameters]
* [https://repository.upenn.edu/scn_tooldata/35/ SiN<sub>x</sub> deposition process parameters]
* [https://repository.upenn.edu/scn_tooldata/43/ Optimization of a-Si deposition on Oxford PlasmaLab 100 PECVD using Taguchi L9 based DOE]