View source for Cambridge Nanotech S200 ALD

[[Category:Deposition]]

{{EquipmentInfo
| name = Cambridge Nanotech S200 ALD
| Tool_Name = Cambridge Nanotech S200 ALD
| image = [[Image:ALD-01.jpeg|300px]]
| imagecaption = 
| Instrument_Type = Deposition
| Staff_Manager = [[Sam Azadi | Sam Azadi]]
| Lab_Location = Bay 1
| Tool_Manufacturer = Ultratech/Cambridge
| Tool_Model = S200
| NEMO_Designation = ALD-01
| Lab_Phone = 215-898-9736
| SOP Link = [https://repository.upenn.edu/scn_sop/6/ QNF SOP]
}}

== Description ==
The QNF Savannah ALD is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.

The QNF Savannah ALD is capable of holding substrates of different sizes (up to 200mm). The system is equipped with six precursor lines for deposition of Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, SiO<sub>2</sub>, and TiO<sub>2</sub>.

===== Applications =====
* [[ALD-01: Aluminum Oxide Deposition | Aluminum Oxide Deposition]]
* [[ALD-01: Hafnium Oxide Deposition | Hafnium Oxide Deposition]]
* Titanium oxide deposition
* Silicon Dioxide deposition
* Deposition of other films can be made available upon request

===== Allowed material in ALD System =====
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI
* Hard masks compatible with process temperature

== Process Data ==

==== Standard Processes ====


* Water based depositions
{| class="wikitable"
! rowspan=2 |Material Name 
! colspan=3 |Precursor 1
! colspan =3 |Precursor 2
! rowspan=2 |Dep. temperature [C]
!rowspan=2 | Carrier flow [sccm] 
!rowspan=2 | Dep. rate [A/cyc] 
!rowspan=2 |Date [MM/DD/YY]
|-
! Name || Pulse time [s] || Wait time [s] || Name || Pulse time [s] || Wait time [s] 
|- 
| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 245 || 20 || 1 || 06/28/23
|- 
| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.015 || 5 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1 || 09/24/22
|- 
| Al<sub>2</sub>O<sub>3</sub> || TMA || 0.020 || 5 || H<sub>2</sub>O || 0.020 || 5 || 150 || 20 || 1 || 02/09/24
|-
| HfO<sub>2</sub> || TDMAHf || 0.15 || 8 || H<sub>2</sub>O || 0.015 || 5 || 200 || 20 || 1.3 || 09/24/22
|-
| HfO<sub>2</sub> || TDMAHf || 0.3 || 10 || H<sub>2</sub>O || 0.015 || 8 || 150 || 20 || 1.3 || 04/25/23
|-
| TiO<sub>2</sub> || TDMATi || 0.4 || 10 || H<sub>2</sub>O || 0.015 || 5 || 250 || 20 || 0.4 || 05/02/22
|-
| TiO<sub>2</sub> || TDMATi || 0.3 || 10 || H<sub>2</sub>O || 0.015 || 10 || 150 || 20 || 0.5 || 02/02/24
|-
|}

* Ozone based depositions
Recipe name: 200C_SiO2_qnf_wiki
{| class="wikitable"
! rowspan=2 |Material Name 
! colspan=3 |Precursor 1
! colspan =3 |Precursor 2
! rowspan=2 |Dep. temperature [C]
!rowspan=2 | Carrier flow [sccm] 
!rowspan=2 | Dep. rate [A/cyc] 
!rowspan=2 |Date [MM/DD/YY]
|-
! Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open || Name || Pulse time [s] || Wait time [s] : Stop Valve closed / open 
|-
| SiO<sub>2</sub> || BDEAS || 0.05 || 5 SV closed/ 3 SV open || O<sub>3</sub> || 0.2 || 20 SV closed/ 5 SV open  || 200 || 20 || 0.6 || 10/29/24
|-
|}

==== Deposition Rate Monitoring ====

[[Image:Hafnia Oct6.jpg|left|500px]] [[Image:Alumina Oct6.jpg|center|500px]]

== Resources ==

===== SOPs & Troubleshooting =====
* [https://repository.upenn.edu/scn_sop/6/ QNF SOP]
* [https://upenn.box.com/s/3hq8iik8jeb1385mrwgs16i6vfpvxt6f ALD KOH Cleaning Procedure]


===== Protocols and Reports =====

* [https://repository.upenn.edu/scn_protocols/72/ ALD deposition of SiO<sub>2</sub> using BDEAS and Ozone precursors]