Difference between revisions of "What is Chemical Vapor Deposition (CVD)?"
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# '''Precursor Delivery:''' Precursor gases (or vapors) are introduced into a reaction chamber containing the substrate material. | # '''Precursor Delivery:''' Precursor gases (or vapors) are introduced into a reaction chamber containing the substrate material. | ||
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# '''Chemical Reaction:''' The precursor molecules react with the substrate surface or with other reactive species present in the chamber, leading to the deposition of a thin film of material on the substrate. | # '''Chemical Reaction:''' The precursor molecules react with the substrate surface or with other reactive species present in the chamber, leading to the deposition of a thin film of material on the substrate. | ||
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# '''Film Growth:''' The deposited material grows on the substrate surface as the chemical reaction continues. The growth rate can be controlled by adjusting parameters such as precursor flow rate, temperature, and pressure. | # '''Film Growth:''' The deposited material grows on the substrate surface as the chemical reaction continues. The growth rate can be controlled by adjusting parameters such as precursor flow rate, temperature, and pressure. | ||
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# '''Evacuation:''' Any unreacted precursor gases, reaction byproducts, and excess materials are removed from the chamber through evacuation or purging. | # '''Evacuation:''' Any unreacted precursor gases, reaction byproducts, and excess materials are removed from the chamber through evacuation or purging. | ||
Revision as of 11:32, 5 April 2024
Chemical Vapor Deposition (CVD) in which thin films are deposited onto a substrate surface through the chemical reaction of vapor-phase precursor molecules.
The basic process involves the following steps:
- Precursor Delivery: Precursor gases (or vapors) are introduced into a reaction chamber containing the substrate material.
- Chemical Reaction: The precursor molecules react with the substrate surface or with other reactive species present in the chamber, leading to the deposition of a thin film of material on the substrate.
- Film Growth: The deposited material grows on the substrate surface as the chemical reaction continues. The growth rate can be controlled by adjusting parameters such as precursor flow rate, temperature, and pressure.
- Evacuation: Any unreacted precursor gases, reaction byproducts, and excess materials are removed from the chamber through evacuation or purging.