Difference between revisions of "Raith EBPG5200+ E-Beam Lithography System"
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| imagecaption = | | imagecaption = | ||
| Instrument_Type = Lithography | | Instrument_Type = Lithography | ||
| − | | Staff_Manager = David Barth | + | | Staff_Manager = [[David Barth | David Barth]] |
| Lab_Location = Bay 4 | | Lab_Location = Bay 4 | ||
| Tool_Manufacturer = Raith | | Tool_Manufacturer = Raith | ||
| Tool_Model = EBPG5200+ | | Tool_Model = EBPG5200+ | ||
| − | | | + | | NEMO_Designation = EBL-03 |
| Lab_Phone = 8-9799 | | Lab_Phone = 8-9799 | ||
| − | | SOP Link = [https://repository.upenn.edu/ | + | | SOP Link = [https://repository.upenn.edu/entities/publication/8cf0d00b-4111-444b-90d1-965b23691703 SOP] |
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===== SOPs & Troubleshooting ===== | ===== SOPs & Troubleshooting ===== | ||
| − | * [https://repository.upenn.edu/ | + | * [https://repository.upenn.edu/entities/publication/8cf0d00b-4111-444b-90d1-965b23691703 SOP] |
| + | * [https://upenn.box.com/s/atymr3okn3xf20rb1kvk7ny79plojobm Graph of Spotsize vs. Current (Internal Use Only)] | ||
| + | * [https://upenn.box.com/s/gzj28stdehm1kfmwjpcnio7vimr4m1w9 Alignment Mark Guidelines] | ||
===== Resist and Process Data ===== | ===== Resist and Process Data ===== | ||
Revision as of 15:20, 26 February 2024
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| Tool Name | Raith EBPG5200+ EBL |
|---|---|
| Instrument Type | Lithography |
| Staff Manager | David Barth |
| Lab Location | Bay 4 |
| Tool Manufacturer | Raith |
| Tool Model | EBPG5200+ |
| NEMO Designation | EBL-03 |
| Lab Phone | 8-9799 |
| SOP Link | SOP |
Description
The Raith EBPG5200+ is an electron beam lithography tool capable of high resolution patterning at 100 kV. It has a 125 MHz pattern generator, a maximum current of 350 nA, and a 1 mm mainfield size. It has an automatic aperture changer, automatic and dynamic focus and stigmation, and automatic alignment. The EBPG can achieve linewidths <8nm with stitching and overlay accuracy better than 10nm.
Applications
- Large scale, high speed patterning of positive and negative e-beam resists with features from <10 nm to micron/mm scale
Allowed Materials
- Standard semiconductor materials
- Low vapor pressure metals
- Resists