Difference between revisions of "Heidelberg DWL 66+ Laser Writer"

From Quattrone Nanofabrication Facility
Jump to navigation Jump to search
Line 30: Line 30:
  
 
== Processes ==
 
== Processes ==
 +
The following exposure parameters may be used to expose photomasks.
 +
{| class="wikitable" style="vertical-align:bottom;"
 +
|-
 +
! Resist
 +
! Write Head
 +
! Filter(s)
 +
! Laser Power (mW)
 +
! Intensity
 +
! Focus
 +
! Focus mode
 +
|-
 +
| AZ1500
 +
| 10mm
 +
| 50%
 +
| 50
 +
| 70%
 +
| -10
 +
| Pnematic
 +
|-
 +
| IP3500
 +
| 10mm
 +
| None
 +
| 50
 +
| 90%
 +
| -10
 +
| Pnematic
 +
|-
 +
| IP3500
 +
| 2mm
 +
| 12.5%
 +
| 50
 +
| 30%
 +
| -30
 +
| Pnematic
 +
|}
 +
 +
 
The following exposure parameters may be used to direct write into S1800 resist (soft baked at 115C for 1 minute) with the 10mm write head.  For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use.
 
The following exposure parameters may be used to direct write into S1800 resist (soft baked at 115C for 1 minute) with the 10mm write head.  For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use.
  

Revision as of 14:43, 26 January 2023


Heidelberg DWL 66+ Laser Writer
LW-01.jpeg
Tool Name Heidelberg DWL 66+ Laser Writer
Instrument Type Lithography
Staff Manager David Jones
Lab Location Bay 2
Tool Manufacturer Heidelberg
Tool Model DWL 66+
NEMO Designation {{{NEMO_Designation}}}
Lab Phone 8-9799
SOP Link SOP

Description

The fully automated DWL 66+ laser writing system is located inside an environment chamber for stable environment of the system with controlled laminar airflow and temperature stability. The chamber is situated on a granite base with air cushions for vibration isolation. The optical system includes highly reflective mirrors and acousto-optic modulators for real-time beam correction.

Lens & Resolution

  • 2 mm lens (optical autofocus): 600 nm
  • 10 mm lens (pneumatic autofocus): 2 µm
  • 40 mm lens (pneumatic autofocus): 10 µm


Applications
  • Patterning of photomasks
  • Direct laser writing of patterns

Processes

The following exposure parameters may be used to expose photomasks.

Resist Write Head Filter(s) Laser Power (mW) Intensity Focus Focus mode
AZ1500 10mm 50% 50 70% -10 Pnematic
IP3500 10mm None 50 90% -10 Pnematic
IP3500 2mm 12.5% 50 30% -30 Pnematic


The following exposure parameters may be used to direct write into S1800 resist (soft baked at 115C for 1 minute) with the 10mm write head. For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use.

Resist thk (µm) Laser power (mW) Intensity Filter
0.50 28.83 100% 50%
0.55 29.53 100% 50%
0.60 30.33 100% 50%
0.65 31.25 100% 50%
0.70 32.28 100% 50%
0.75 33.41 100% 50%
0.80 34.66 100% 50%
0.85 36.03 100% 50%
0.90 37.50 100% 50%
0.95 39.08 100% 50%
1.00 40.78 100% 50%
1.05 42.58 100% 50%
1.10 44.50 100% 50%
1.15 46.53 100% 50%
1.20 48.67 100% 50%
1.25 50.92 100% 50%
1.30 53.28 100% 50%
1.35 55.75 100% 50%
1.40 58.34 100% 50%
1.45 61.03 100% 50%
1.50 63.84 100% 50%


The following exposure parameters may be used to direct write into S1800 resist (soft baked at 115C for 1 minute) with the 2mm write head. For the optimum focus, please refer to the "AZ1500.txt" or "IP3500.txt" files for the optimum value to use.

Resist Thk (µm) Laser Power (mW) Intensity Filter
0.5 24.123 70% 12.5% & 25%
0.55 26.421 70% 12.5% & 25%
0.6 28.708 70% 12.5% & 25%
0.65 30.984 70% 12.5% & 25%
0.7 33.249 70% 12.5% & 25%
0.75 35.503 70% 12.5% & 25%
0.8 37.747 70% 12.5% & 25%
0.85 39.979 70% 12.5% & 25%
0.9 42.200 70% 12.5% & 25%
0.95 44.411 70% 12.5% & 25%
1 46.610 70% 12.5% & 25%
1.05 48.799 70% 12.5% & 25%
1.1 50.977 70% 12.5% & 25%
1.15 53.143 70% 12.5% & 25%
1.2 55.299 70% 12.5% & 25%
1.25 57.444 70% 12.5% & 25%
1.3 59.578 70% 12.5% & 25%
1.35 61.701 70% 12.5% & 25%
1.4 63.813 70% 12.5% & 25%
1.45 65.914 70% 12.5% & 25%
1.5 68.005 70% 12.5% & 25%

Resources

SOPs & Troubleshooting