What is Chemical Vapor Deposition (CVD)?

Chemical Vapor Deposition (CVD) is a thin-film deposition technique in which thin films are deposited onto a substrate surface through the chemical reaction of vapor-phase precursor molecules.

The basic process involves the following steps:

1. Precursor Delivery: Precursor gases (or vapors) are introduced into a reaction chamber containing the substrate material.
2. Chemical Reaction: The precursor molecules react with the substrate surface or with other reactive species present in the chamber, leading to the deposition of a thin film of material on the substrate.
3. Film Growth: The deposited material grows on the substrate surface as the chemical reaction continues. The growth rate can be controlled by adjusting parameters such as precursor flow rate, temperature, and pressure.
4. Evacuation: Any unreacted precursor gases, reaction byproducts, and excess materials are removed from the chamber through evacuation or purging.

CVD offers a wide range of materials growth possibilities and provides:

• Excellent film uniformity and conformity.
• Scalability for large-area deposition.
• Compatibility with various substrate materials.