Simple Rate Characterization Process

A lithography-free method for determining deposition rates for non-standard processes. Use cases include new materials, custom deposition parameters, deposition of material from a new cathode, co-sputtering deposition rates, and many more. The process is also useful for in-situ measurement of deposition thickness when direct measurement is not possible on the working sample.

Method

Sample Prep

Prepare a small (~1cm square) piece of bare Si. Using a Sharpie, draw over a portion of the piece on the polished side. Place the drawn piece into the process chamber/sample holder using mounting methods as necessary, ensuring that the interface between the Si and marker regions is exposed. If you wish to average the deposition rate over a large area, repeat the prep for multiple samples and place them accordingly throughout the chamber/holder.

Deposition

Run the deposition process for which you wish to characterize. When developing a new sputtering recipe, remember to always stay below the maximum allowed power per target. If you are creating a process for a new material, consult with the tool owner or staff for suggestions on process parameters.

"Lift off"

When the deposition is complete, you may perform a lift-off using the marker ink. The ink is removed by acetone.