RTA-01

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Description

The Rapid Thermal Annealer-01 anneals the sample up to 1200° C. The processes can be run under atmospheric pressure in Oxygen, Nitrogen, Forming Gas, and Argon environments. The tool can hold 4’’ wafers or smaller chips. Only MOS-compatible materials are allowed. Compound semiconductors and metals are not allowed.

Resources

Retrieved from "https://wiki.nano.upenn.edu/wiki/index.php?title=RTA-01&oldid=1970"