Difference between revisions of "Veeco Savannah 200"
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== Resources == | == Resources == | ||
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===== Most Recent Deposition Rates ===== | ===== Most Recent Deposition Rates ===== | ||
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-Thin film sheet resistance of Pt deposited using the process parameters above at ~ 10 nm is: ~ 30 Ohm/Sq | -Thin film sheet resistance of Pt deposited using the process parameters above at ~ 10 nm is: ~ 30 Ohm/Sq | ||
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| + | ===== SOPs & Troubleshooting ===== | ||
| + | * [https://repository.upenn.edu/scn_sop/6/ QNF SOP] | ||
Revision as of 11:45, 29 November 2022
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| Tool Name | Creating Veeco Savannah 200 |
|---|---|
| Instrument Type | Deposition |
| Staff Manager | Sam Azadi |
| Lab Location | Bay 2 |
| Tool Manufacturer | Veeco |
| Tool Model | Savannah 200 |
| NEMO Designation | {{{NEMO_Designation}}} |
| Lab Phone | 215-898-9736 |
| SOP Link | SOP |
Description
Savannah is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode for thin film deposition on Ultra High Aspect Ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1. Savannah is capable of holding substrates of different sizes up to 200mm. The Savannah thin film deposition systems are equipped with Pd, Pt precursors, TMA, HfCl4, formalin and Ozone.
Films
- Pt
- Aluminum oxide
- Pd
- Under development: Hafnia (using HfCl4 and O3)
Resources
Most Recent Deposition Rates
| Material Name | Precursor 1 | Precursor 2 | Dep. temperature [C] | Carrier flow [sccm] | Dep. rate [A/cyc] | Date [MM/DD/YY] | ||||
|---|---|---|---|---|---|---|---|---|---|---|
| Name | Pulse time [s] | Wait time [s] | Name | Pulse time [s] | Wait time [s] | |||||
| Al2O3 | TMA | 0.015 | 5 | O3 | 0.05 | 5 | 200 | 20 | 1.1 | 10/17/22 |
| Pt | MeCpPtMe3 | 0.6 | 5 | O3 | 0.05 | 5 | 200 | 20 | 0.7 | 10/18/22 |
-Note that Pt deposition saturates at ~ 10 nm and the deposition rate only applies to thicknesses of ~ 5 - 10nm.
-Thin film sheet resistance of Pt deposited using the process parameters above at ~ 10 nm is: ~ 30 Ohm/Sq